• DocumentCode
    1869236
  • Title

    Study on transparent amorphous indium oxide thin film transistors technology

  • Author

    Chih-Hsiang Chang ; Yu-Chia Lai ; Yang-Shun Fan ; Che-Chia Chang ; Po-Tsun Liu

  • Author_Institution
    Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2015
  • fDate
    June 29 2015-July 2 2015
  • Firstpage
    399
  • Lastpage
    403
  • Abstract
    In this study, we analyzed the In2O3 thin films with different oxygen flow rate during sputtering as the transistor´s channel layer. The electrical analysis including device´s reliability and material analysis were both examined.
  • Keywords
    amorphous semiconductors; indium compounds; semiconductor device reliability; sputtering; thin film transistors; In2O3; oxygen flow rate; sputtering; transistor channel layer; transparent amorphous thin film transistor technology; Charge carrier processes; Fluid flow; Indium; Logic gates; Stress; Thin film transistors; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/IPFA.2015.7224410
  • Filename
    7224410
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1869236