DocumentCode
1869296
Title
Annealing effect of PbS quantum dot solar cells
Author
Gao, Jianbo ; Jeong, Sohee ; Semonin, Octavi E. ; Ellingson, Randy J. ; Nozik, Arthur J. ; Beard, Matthew C.
Author_Institution
Nat. Renewable Energy Lab., Chem. & Mater. Sci. Center, CO, USA
fYear
2011
fDate
19-24 June 2011
Abstract
We recently reported an NREL certified ~3% efficient device with structure of ITO/ZnO/PbS QD/Au. The device is remarkably stable in air without encapsulation for more than 1000 hours. Therefore, in this study we focus on devices with structure of ITO/ZnO/PbS QD/metal fabricated in air. By annealing PbS QD film at low temperature up to 140C, the solar cell efficiency can be achieved to more than 4%.
Keywords
annealing; gold; indium compounds; lead compounds; quantum dots; solar cells; tin compounds; zinc compounds; Au; ITO-ZnO-PbS; QD film; QD-metal; annealing effect; quantum dot solar cells; Anodes; Gold; Heterojunctions; Photovoltaic cells; Quantum dots; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location
Seattle, WA
ISSN
0160-8371
Print_ISBN
978-1-4244-9966-3
Type
conf
DOI
10.1109/PVSC.2011.6186485
Filename
6186485
Link To Document