• DocumentCode
    1869311
  • Title

    InGaAs metal-oxide-semiconductor FETs with self-aligned Ni-Alloy source/drain

  • Author

    Shin-Yuan Wang ; Chao-Hsin Chien ; Jin-Ju Lin ; Chun-Yen Chang

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2015
  • fDate
    June 29 2015-July 2 2015
  • Firstpage
    415
  • Lastpage
    418
  • Abstract
    N-type InGaAs MOSFETs with self-aligned nickel-InGaAs alloy and ex-situ ALD Al2O3 as gate dielectrics was successfully fabricated. The InGaAs MOSFETs exhibit an S/D resistance (RSD) that is lower than that in P-N junction devices due to the low Schottky barrier height and the peak mobility was about 1138 cm2/V-s and the interface state density (Dit) was about 1012 cm-2eV-1 at ET = EV + 0.6 eV by using full-conductance method.
  • Keywords
    III-V semiconductors; MOSFET; Schottky barriers; gallium arsenide; indium alloys; nickel alloys; InGaAs; MOSFET; full-conductance method; gate dielectrics; interface state density; low Schottky barrier height; metal-oxide-semiconductor FET; peak mobility; self-aligned source/drain; Aluminum oxide; Dielectrics; Indium gallium arsenide; Logic gates; MOSFET;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/IPFA.2015.7224414
  • Filename
    7224414
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1869311