DocumentCode :
1869311
Title :
InGaAs metal-oxide-semiconductor FETs with self-aligned Ni-Alloy source/drain
Author :
Shin-Yuan Wang ; Chao-Hsin Chien ; Jin-Ju Lin ; Chun-Yen Chang
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2015
fDate :
June 29 2015-July 2 2015
Firstpage :
415
Lastpage :
418
Abstract :
N-type InGaAs MOSFETs with self-aligned nickel-InGaAs alloy and ex-situ ALD Al2O3 as gate dielectrics was successfully fabricated. The InGaAs MOSFETs exhibit an S/D resistance (RSD) that is lower than that in P-N junction devices due to the low Schottky barrier height and the peak mobility was about 1138 cm2/V-s and the interface state density (Dit) was about 1012 cm-2eV-1 at ET = EV + 0.6 eV by using full-conductance method.
Keywords :
III-V semiconductors; MOSFET; Schottky barriers; gallium arsenide; indium alloys; nickel alloys; InGaAs; MOSFET; full-conductance method; gate dielectrics; interface state density; low Schottky barrier height; metal-oxide-semiconductor FET; peak mobility; self-aligned source/drain; Aluminum oxide; Dielectrics; Indium gallium arsenide; Logic gates; MOSFET;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
Type :
conf
DOI :
10.1109/IPFA.2015.7224414
Filename :
7224414
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1869311
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