Title :
A high tensile stress spacer by low temperature microwave anneal induced 50% mobility enhancement for nano scale FinFETs device
Author :
Yi-Ju Chen ; Yao-Ming Huang ; Yun-Fang Hou ; Min-Cheng Chen ; Yao-Jen Lee ; Wen-Fa Wu ; Jia-Ming Shieh
Author_Institution :
Nat. Nano Device Labs., Hsinchu, Taiwan
fDate :
June 29 2015-July 2 2015
Abstract :
Tensile stress enhancement by rapid thermal annealing (RTA) and microwave annealing (MWA) are compared in this study. SiNx films after low temperature MWA treatment depicted higher tensile stress than the films annealed by RTA. Therefore, MWA approach is useful in contact etch-stop layer or stress memorization technique for the fabrication of small pitch nanoscaled n-channel FinFETs.
Keywords :
MOSFET; carrier mobility; rapid thermal annealing; silicon compounds; stress analysis; MWA; RTA; SiNx; contact etch-stop layer; low temperature microwave annealing; mobility enhancement; nanoscale n-channel FinFET device; rapid thermal annealing; stress memorization technique; tensile stress spacer; Annealing; Electromagnetic heating; FinFETs; Magnetrons; Microwave theory and techniques; Strain; Stress;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224417
