Title :
A novel access scheme suppressing disturbance for a cross-point type ferroelectric memory
Author :
Sakai, N. ; Ishizuka, Y. ; Matsushita, S. ; Takano, Y. ; Ogasawara, S. ; Honma, K. ; Geshi, T. ; Inoue, Y. ; Fukase, K.
Author_Institution :
Mater. & Devices Dev. Center, Sanyo Electr. Co. Ltd., Gifu, Japan
Abstract :
To resolve the disturbance problem of stored data being destroyed in a cross-point type FeRAM, which has prevented it from being put into practical use, we propose a novel access scheme for read-restore sequence. The unique point of this scheme is two restore sequences that are dynamically changed according to read-out data. Based on this scheme, the reduction of polarization induced by the disturbance is suppressed to be less than 17% after stress iteration of 10/sup 9/ times.
Keywords :
dielectric polarisation; ferroelectric storage; random-access storage; RAM; cross-point type ferroelectric memory; ferroelectric polarization; read-out data; read-restore sequence; Capacitors; Degradation; Ferroelectric films; Ferroelectric materials; Low voltage; Nonvolatile memory; Polarization; Random access memory; Silicon; Stress;
Conference_Titel :
VLSI Circuits, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-034-8
DOI :
10.1109/VLSIC.2003.1221192