Title :
Plasma chemical reactor for precision etching of elements with submicron size
Author :
Pavlenko, V.N. ; Panchenko, V.G.
Author_Institution :
Inst. for Nucl. Res., Kiev, Ukraine
Abstract :
Summary form only given, as follows. We have created a plasma chemical reactor with the possibility of ion energy control from 50 W up to 500 W and more. In the main working regime the ion energy is regulated in the range 50-150 W. It is shown the etching velocity of Al films is /spl nu//sub et//spl les/0.5 /spl mu/m/min at the anisotropy coefficient q>7 and the etching selection relatively Si/spl sim/20 and the size of elements are nearly: 0.3-0.5 /spl mu/m.
Keywords :
plasma devices; sputter etching; 0.3 to 0.5 micron; 50 to 500 W; Al; Al films; Si; anisotropy coefficient; etching selection; etching velocity; ion energy control; plasma chemical reactor; precision etching; submicron size elements; Cathodes; Chemical elements; Chemical reactors; Diodes; Electromagnetic scattering; Etching; Frequency; Plasma applications; Plasma chemistry; Plasma waves;
Conference_Titel :
Plasma Science, 1997. IEEE Conference Record - Abstracts., 1997 IEEE International Conference on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-3990-8
DOI :
10.1109/PLASMA.1997.604873
