Title :
Performance and reliability of non-linear Al-Zn-Sn-O based resistive random access memory
Author :
Yang-Shun Fan ; Wei-Liang Chan ; Chih-Hsiang Chang ; Guang-Ting Zheng ; Che-Chia Chang ; Po-Tsun Liu
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
June 29 2015-July 2 2015
Abstract :
The Al-doped zinc tin oxide based RRAM with non-linearity characteristic was demonstrated. The inhabit ratio (I.R.) of 34 was achieved by inserting ~2nm Al2O3 tunnel barrier to ensure the possible incorporation of RRAM cell into high density cross-type array structure. Furthermore, the reliability with endurance and retention are also examined.
Keywords :
aluminium; oxygen; resistive RAM; semiconductor device reliability; semiconductor doping; tin; zinc; Al-Zn-Sn-O; Al2O3; RRAM cell; resistive random access memory; tunnel barrier; Aluminum oxide; Arrays; Microprocessors; Reliability; Switches; Tunneling;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224421
