• DocumentCode
    1869490
  • Title

    Performance and reliability of non-linear Al-Zn-Sn-O based resistive random access memory

  • Author

    Yang-Shun Fan ; Wei-Liang Chan ; Chih-Hsiang Chang ; Guang-Ting Zheng ; Che-Chia Chang ; Po-Tsun Liu

  • Author_Institution
    Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2015
  • fDate
    June 29 2015-July 2 2015
  • Firstpage
    381
  • Lastpage
    384
  • Abstract
    The Al-doped zinc tin oxide based RRAM with non-linearity characteristic was demonstrated. The inhabit ratio (I.R.) of 34 was achieved by inserting ~2nm Al2O3 tunnel barrier to ensure the possible incorporation of RRAM cell into high density cross-type array structure. Furthermore, the reliability with endurance and retention are also examined.
  • Keywords
    aluminium; oxygen; resistive RAM; semiconductor device reliability; semiconductor doping; tin; zinc; Al-Zn-Sn-O; Al2O3; RRAM cell; resistive random access memory; tunnel barrier; Aluminum oxide; Arrays; Microprocessors; Reliability; Switches; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/IPFA.2015.7224421
  • Filename
    7224421
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1869490