Title :
GaAs/AlGaAs quantum nanostructure by droplet epitaxy for photovoltaic application
Author :
Tangmettajittakul, O. ; Boonpeng, P. ; Changmoung, P. ; Thainoi, S. ; Rattanathammaphan, S. ; Panyakeow, S.
Author_Institution :
Dept. of Electr. Eng., Chulalongkorn Univ., Bangkok, Thailand
Abstract :
We report GaAs/AlGaAs quantum nanostructures grown by droplet epitaxy technique and its potential for photovoltaic applications. GaAs quantum rings are formed by deposition of Ga droplets at 250-350°C and crystallization at 200°C on AlGaAs epitaxial layer grown by migration enhanced epitaxy (MEE) at low temperature of 350°C. We can observe the existence of GaAs quantum rings with a density of 1 ×109 cm-2 to 5.5 ×109 cm-2. This GaAs/AlGaAs quantum nanostructure is used as the active part in photovoltaic cells with PN junction for I-V characterization.
Keywords :
III-V semiconductors; aluminium compounds; crystallisation; drops; gallium arsenide; nanostructured materials; p-n junctions; photovoltaic cells; semiconductor epitaxial layers; AlGaAs epitaxial layer growth; Ga droplets; GaAs quantum rings; GaAs-AlGaAs; GaAs/AlGaAs quantum nanostructure; I-V characterization; PN junction; crystallization; deposition; droplet epitaxy; migration enhanced epitaxy; photovoltaic application; photovoltaic cells; temperature 200 degC; temperature 250 degC to 350 degC; Crystallization; Epitaxial growth; Gallium arsenide; Photovoltaic cells; Quantum dots; Structural rings; Surface treatment;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6186496
