A high density, low on-resistance p-channel trench lateral power MOSFET for high side switches

Author

Sawada, M. ; Sugi, A. ; Iwaya, M. ; Kajiwara, S. ; Matsunaga, S. ; Mochizuki, K. ; Fujishima, N.

Author_Institution

Device Technol. Lab., Fuji Electr. Adv. Technol. Co., Ltd, Nagano, Japan

Volume

6

fYear

2004

fDate

20-25 June 2004

Firstpage

4143

Abstract

A trench lateral power MOSFET (TLPM) has a unique structure. The gate is formed on the trench sidewall, and the drain is connected with metal wire at the bottom of the trench. This structure enables high device density compared to conventional lateral DMOSs. A p-channel TLPM for high side switches has been first integrated. A specific on-resistance of 28 mΩ - mm² with a breakdown voltage of 35 V has been realized. This is the best specific on-resistance in this voltage class for a p-channel lateral power MOSFET embedded with logic devices. P-channel, n-channel TLPM devices and a 0.6 μm bi-CMOS are fabricated on the same silicon wafer, thus a synchronous switching converter can be implemented on a single chip.

Keywords

CMOS integrated circuits; power MOSFET; switching convertors; 0.6 mum; 35 V; high side switches; lateral DMOS; p-channel trench lateral power MOSFET; synchronous switching converter; Fabrication; Logic devices; MOSFET circuits; Power MOSFET; Silicon; Surface resistance; Switches; Switching converters; Voltage; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 2004. PESC 04. 2004 IEEE 35th Annual

ISSN

0275-9306

Print_ISBN

0-7803-8399-0

Type

conf

DOI

10.1109/PESC.2004.1354732

Filename

1354732