Title :
Fabrication and reliability investigation of copper pillar and tapered through silicon via (TSV) for direct bonding in 3D integration
Author :
Yu-Wei Chang ; Kuan-Neng Chen
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
June 29 2015-July 2 2015
Abstract :
Compare to the conventional structure, in this research, the structure of Cu pillar and tapered TSV for direct bonding has an excellent potential for low bonding temperature within a short bonding time. In addition, this scheme has the advantage of self-alignment ability. This paper focuses on the fabrication of taper-shape of through silicon via (TSV) and reports the quality and reliability investigation of bonding results.
Keywords :
bonding processes; copper; semiconductor device reliability; three-dimensional integrated circuits; 3D integration; TSV; copper pillar; direct bonding; low bonding temperature; self-alignment ability; tapered through silicon via; Bonding; Copper; Plating; Three-dimensional displays; Through-silicon vias; Wet etching;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224427
