DocumentCode
1869746
Title
Impact of aspect ratio and line spacing on microstructure in damascene Cu interconnects
Author
Chen, L.
Author_Institution
Sch. of Mater. Sci. & Eng., Univ. of Sci. & Technol. Beijing, Beijing, China
fYear
2015
fDate
June 29 2015-July 2 2015
Firstpage
451
Lastpage
454
Abstract
The present work focuses on the microstructure of annealed damascene Cu interconnects with different trench aspect ratio and line spacing. The X-ray diffraction (XRD) and electron backscatter diffraction (EBSD) measurements are conducted on the surface of Cu interconnects after removal of the SiN layer. The experimental results show that strong {111} fibre texture exists in the Cu interconnects, and the volume fractions of both high angle grain boundaries and Σ3 twin grain boundaries are very large. With trench aspect ratio increase, the bamboo-like structure appears. The trenches reduce the proportion of high angle grain boundaries and increase the volume fraction of Σ3 twin grain boundaries, comparing with the Cu blanket film. Both trench aspect ratio and line spacing can largely affect the microstructure of damascene Cu interconnects.
Keywords
X-ray diffraction; annealing; copper; electron backscattering; integrated circuit interconnections; silicon compounds; twin boundaries; Cu; EBSD measurements; SiN; SiN layer removal; X-ray diffraction; XRD; annealed damascene Cu interconnects microstructure; electron backscatter diffraction measurements; high angle grain boundaries; line spacing; strong {111} fibre texture; trench aspect ratio; twin grain boundaries; volume fractions; Annealing; Electromigration; Grain boundaries; Grain size; Integrated circuit interconnections; Microstructure; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location
Hsinchu
Type
conf
DOI
10.1109/IPFA.2015.7224430
Filename
7224430
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