DocumentCode :
1869763
Title :
Role of doping profile on semiconductor laser performance: simulation and experiment
Author :
Hybertsen, Mark S. ; Alam, Md. Ashraful ; Baraff, G.A. ; Smith, R.K. ; Belenky, G.L. ; Donetsky, D.V. ; Shtengel, G.E. ; Reynolds, C.L. ; Kazarinov, R.F.
Author_Institution :
Bell Labs., Lucent Technol., Murray Hill, NJ, USA
fYear :
1999
fDate :
28-28 May 1999
Firstpage :
309
Lastpage :
310
Abstract :
Summary form only given. It is widely known that the doping near the active region of a semiconductor laser has important consequences for the device performance, e.g. leakage current and modulation response. However, a clear microscopic picture is still needed. In this paper, we show that p-i junction placement controls laser output characteristics, in agreement with predictions of microscopic simulation. However, the same doping profile can not simultaneously optimize the static output characteristics and the high speed modulation response.
Keywords :
doping profiles; leakage currents; optical modulation; quantum well lasers; semiconductor device models; MQW laser; active region; doping profile role; high speed modulation response; laser output characteristics; leakage current; microscopic simulation; normal carrier transport; p-i junction placement; resonance frequency; semiconductor laser performance; slope efficiency; static output characteristics; Delay; Doping profiles; Fluctuations; Laser feedback; Laser mode locking; Laser modes; Optical bistability; Optical feedback; Optical pulses; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
Type :
conf
DOI :
10.1109/CLEO.1999.834234
Filename :
834234
Link To Document :
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