Title :
A straightforward method to prepare chalcopyrite CIGS films by one-step sputtering process without extra Se supply
Author :
Chen, Chia-Hsiang ; Hsu, Chia-Hao ; Chien, Chih-Yu ; Wu, Yan-Huei ; Lai, Chih-Huang
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
Chalcopyrite Cu(In, Ga)Se2 (CIGS) films were directly fabricated by using one-step sputtering from a single quaternary target even without extra Se supply during deposition or post selenization treatment. Structural and electrical properties have been investigated. Cu2-xSe phase was usually observed in the as-deposited samples. However, such second phase could be removed by KCN treatment. Our results showed that the CIGS absorber layer prepared by our one-step sputtering process exhibited columnar structure with (112) preferred orientation and the device revealed an efficiency of 8.01%.
Keywords :
copper compounds; electric properties; gallium compounds; indium compounds; sputtered coatings; CuInGaSe2; absorber layer; chalcopyrite CIGS film; electrical properties; sputtering process; structural properties; Compounds; Copper; Films; Grain boundaries; Photovoltaic cells; Sputtering; Surface morphology;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6186502
