Title :
Four-Point Bending Methodology development for 40nm technology Cu/Nblk interface adhesion measurement
Author :
Wang, Y. ; Yang, Y.J. ; Chong, M.M. ; Nistala, R.R. ; Rao, X.S. ; Seet, C.S. ; Mo, Z.Q. ; Zhao, S.P. ; Lam, J.
Author_Institution :
GLOBALFOUNDRIES Singapore Pte Ltd., Singapore, Singapore
fDate :
June 29 2015-July 2 2015
Abstract :
A sample preparation methodology was developed for Four-Point Bending test (4PB) of Cu/Nblk (Nitrogen-doped Barrier for Low-k, SiCN) bi-material in order to overcome interfacial delamination zero yielding issue, possibly caused by the change in carbon content of Nblk film. The methodology involving (i) chemical de-processing (HNO3:BOE mixture) and (ii) film thickness optimization was instrumental in achieving greater than 50% delamination yield.
Keywords :
delamination; integrated circuit interconnections; integrated circuit measurement; integrated circuit testing; low-k dielectric thin films; optimisation; carbon content; chemical deprocessing; four-point bending methodology; interface adhesion measurement; interfacial delamination; size 40 nm; Adhesives; Carbon; Chemicals; Delamination; Films; Integrated circuits; Silicon;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224434
