New insights on the origin of Resistive switching in HfO2 thin films: The role of local mechanical strength

Author

Yuanyuan Shi ; Yanfeng Ji ; Fei Hui ; Nafria, Montserrat ; Porti, Marc ; Bersuker, Gennadi ; Lanza, Mario

Author_Institution

Inst. of Functional Nano & Soft Mater., Soochow Univ., Suzhou, China

fYear

2015

fDate

June 29 2015-July 2 2015

Firstpage

472

Lastpage

475

Abstract

In the Resistive Random Access Memory (RRAM) devices, switching between high and low resistive states is controlled by the processes of disruption and restoration of a conductive filament, which could be formed through the dielectric film. In this study, we demonstrate that RS is strongly linked to the mechanical properties of the insulator that should be considered in the design of flexible memories, which are usually subjected to significant mechanical strains.

Keywords

dielectric thin films; hafnium compounds; mechanical strength; resistive RAM; HfO₂; RRAM devices; conductive filament; dielectric film; flexible memories design; high resistive states; insulator; local mechanical strength; low resistive states; mechanical properties; mechanical strains; resistive random access memory devices; resistive switching; Annealing; Dielectrics; Films; Grain boundaries; Hafnium compounds; Surface morphology; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/IPFA.2015.7224435

Filename

7224435