Title :
Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping
Author :
Chih-Pin Lin ; Li-Syuan Lyu ; Ching-Ting Lin ; Pang-Shiuan Liu ; Wen-Hao Chang ; Lain-Jong Li ; Tuo-Hung Hou
Author_Institution :
Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
June 29 2015-July 2 2015
Abstract :
We investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.
Keywords :
chemical vapour deposition; grain boundaries; harmonic generation; molybdenum compounds; monolayers; nondestructive testing; semiconductor device testing; thin film transistors; CVD-synthesized films; MoS2; carrier scattering; channel region; chemical vapour deposition; grain boundaries; grain size effect; inversion symmetry; monolayer transistors; on-off current ratio; second harmonic generation mapping; Films; Grain boundaries; Grain size; Hafnium compounds; Nickel; Performance evaluation; Thin film transistors;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224436
