Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping

Author

Chih-Pin Lin ; Li-Syuan Lyu ; Ching-Ting Lin ; Pang-Shiuan Liu ; Wen-Hao Chang ; Lain-Jong Li ; Tuo-Hung Hou

Author_Institution

Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2015

fDate

June 29 2015-July 2 2015

Firstpage

476

Lastpage

479

Abstract

We investigated different CVD-synthesized MoS₂ films, aiming to correlate the device characteristics with the grain size. The grain size of MoS₂ can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.

Keywords

chemical vapour deposition; grain boundaries; harmonic generation; molybdenum compounds; monolayers; nondestructive testing; semiconductor device testing; thin film transistors; CVD-synthesized films; MoS₂; carrier scattering; channel region; chemical vapour deposition; grain boundaries; grain size effect; inversion symmetry; monolayer transistors; on-off current ratio; second harmonic generation mapping; Films; Grain boundaries; Grain size; Hafnium compounds; Nickel; Performance evaluation; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/IPFA.2015.7224436

Filename

7224436