Temperature effects on current-voltage and low frequency noise characteristics of multilayer WSe2 FETs

Author

In-Tak Cho ; Won-Mook Kang ; Jeongkyun Roh ; Changhee Lee ; Sung Hun Jin ; Jong-Ho Lee

Author_Institution

Dept. of Electr. & Comput. Eng., Seoul Nat. Univ., Seoul, South Korea

fYear

2015

fDate

June 29 2015-July 2 2015

Firstpage

480

Lastpage

483

Abstract

We investigates the temperature effect on current-voltage and low frequency noise of multilayer WSe₂ FETs. The field effect mobility (μ_FE), I_on/I_off, subthreshold slope (SS) and hysteresis were deteriorated as the temperature increases. It is because of enhanced phonon scattering and increase of thermally generated carrier density. From the dependence of noise power spectral density of drain current, carrier mobility fluctuation is considered as a dominant low frequency noise mechanism. The extracted Hooge´s parameter slightly increased with temperature increase. It is because of enhanced phonon scattering.

Keywords

carrier mobility; field effect transistors; semiconductor device noise; tungsten compounds; WSe₂; carrier mobility fluctuation; current-voltage; drain current; enhanced phonon scattering; field effect mobility; low frequency noise characteristics; multilayer FET; noise power spectral density; subthreshold slope; temperature effects; thermally generated carrier density; Field effect transistors; Low-frequency noise; Nonhomogeneous media; Semiconductor device measurement; Temperature; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/IPFA.2015.7224437

Filename

7224437