Title :
Temperature effects on current-voltage and low frequency noise characteristics of multilayer WSe2 FETs
Author :
In-Tak Cho ; Won-Mook Kang ; Jeongkyun Roh ; Changhee Lee ; Sung Hun Jin ; Jong-Ho Lee
Author_Institution :
Dept. of Electr. & Comput. Eng., Seoul Nat. Univ., Seoul, South Korea
fDate :
June 29 2015-July 2 2015
Abstract :
We investigates the temperature effect on current-voltage and low frequency noise of multilayer WSe2 FETs. The field effect mobility (μFE), Ion/Ioff, subthreshold slope (SS) and hysteresis were deteriorated as the temperature increases. It is because of enhanced phonon scattering and increase of thermally generated carrier density. From the dependence of noise power spectral density of drain current, carrier mobility fluctuation is considered as a dominant low frequency noise mechanism. The extracted Hooge´s parameter slightly increased with temperature increase. It is because of enhanced phonon scattering.
Keywords :
carrier mobility; field effect transistors; semiconductor device noise; tungsten compounds; WSe2; carrier mobility fluctuation; current-voltage; drain current; enhanced phonon scattering; field effect mobility; low frequency noise characteristics; multilayer FET; noise power spectral density; subthreshold slope; temperature effects; thermally generated carrier density; Field effect transistors; Low-frequency noise; Nonhomogeneous media; Semiconductor device measurement; Temperature; Temperature dependence; Temperature measurement;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224437
