Title :
A broadband high linear LNA for GSM/LTE wireless communications
Author :
Zhichao Zhang ; Khan, Mohammad Rezwan ; Li Chen ; Anh Dinh
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Saskatchewan, Saskatoon, SK, Canada
fDate :
April 29 2012-May 2 2012
Abstract :
This paper presents a low power, high linearity wideband cascode low noise amplifier (LNA) targeting the GSM/LTE standards and RFID reader applications. The common source (CS) stage is considered to be the dominated nonlinearity source for cascode LNA and the modified derivative superposition (MDS) technology is adopted to improve the linearity of this stage. However, with the operating frequency increases, the nonlinearity influence coming from the common gate (CG) stage increases also. The nonlinearity effect of the CG stage on the cascode amplifier is investigated and an improving method is proposed. This design combines the MDS technique with the proposed method to increase gain and linearity while maintaining a low NF of the LNA. The proposed LNA is implemented in the IBM 0.13um CMOS technology. The NF is 1.4/2.0/2.1dB at 700/900/950 MHz bands, respectively. The LNA has a third order intercept point of +14.6dBm in a wide frequency from 700MHz to 1GHz.
Keywords :
CMOS integrated circuits; Long Term Evolution; cellular radio; low noise amplifiers; radiocommunication; radiofrequency identification; telecommunication standards; wideband amplifiers; CG stage; CMOS technology; CS stage; GSM/LTE standards; GSM/LTE wireless communications; IBM; MDS technique; MDS technology; RFID reader applications; broadband high linear LNA; cascode LNA; cascode amplifier; common gate stage; common source stage; dominated nonlinearity source; frequency 700 MHz to 1 GHz; frequency 900 MHz; frequency 950 MHz; high linearity wideband cascode low noise amplifier; modified derivative superposition technology; noise figure 1.4 dB; noise figure 2.0 dB; noise figure 2.1 dB; nonlinearity effect; nonlinearity influence; operating frequency; size 0.13 mum; third order intercept point; Bandwidth; CMOS integrated circuits; CMOS technology; Impedance; Linearity; Logic gates; Transistors; Low-noise amplifier (LNA); modified derivative superposition (MDS); nonlinearity; third-order input intercept point (IIP3);
Conference_Titel :
Electrical & Computer Engineering (CCECE), 2012 25th IEEE Canadian Conference on
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-1431-2
Electronic_ISBN :
0840-7789
DOI :
10.1109/CCECE.2012.6334989
