Title :
Characterization and analysis of tiny in-line defect in 28nm process
Author :
Zhao, Gary Yaobin ; Lee, J.H. ; Dai, Tom ; Zhang, Mark ; Chien, Kary
Author_Institution :
Times New Semicond. Manuf. Int. (Beijing) Corp., Beijing, China
fDate :
June 29 2015-July 2 2015
Abstract :
In this paper, tiny in-line defects which correlated with chip low yield were investigated. A procedure which has optimum use of FIBs with different function to prepare ultra-thin TEM sample to analyze tiny defects has been proposed, which help prepare overlap free TEM sample in tiny defect analysis process. TEM /EELS /EFTEM have been performed in tiny defect analysis. Two tiny in-line defect cases were studied, which were both found after poly gate etch but with different defect source.
Keywords :
crack detection; focused ion beam technology; sputter etching; transmission electron microscopy; EELS; EFTEM; FIB; chip low yield; defect source; free TEM sample; poly gate etch; size 28 nm; tiny defect analysis process; tiny in-line defects; ultra-thin TEM sample; Etching; Logic gates; Milling; Nitrogen; Oxygen; Silicides; Silicon;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224445
