• DocumentCode
    1870216
  • Title

    Understanding of HCI degradation temperature dependence in SOI STI-pLDMOSFETs from MR-DCIV spectroscopy

  • Author

    Yandong He ; Ganggang Zhang ; Xing Zhang

  • Author_Institution
    Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
  • fYear
    2015
  • fDate
    June 29 2015-July 2 2015
  • Firstpage
    513
  • Lastpage
    516
  • Abstract
    Temperature dependence of HCI degradation in SOI STI-pLDMOSFETs had been investigated by MR-DCIV method. The temperature-driven interface trap generation was clearly revealed under Vgmax HCI and NBTI stress for single/multi-finger layout device. The self-heating-enhanced degradation was associated with the interface trap generation in channel and accumulation regions and shared NBTI degradation mechanism.
  • Keywords
    MOSFET; hot carriers; negative bias temperature instability; semiconductor device reliability; silicon-on-insulator; spectroscopy; HCI degradation temperature; MR-DCIV spectroscopy; NBTI stress; SOI; STI-pLDMOSFET; hot carrier injection; multifinger layout device; self-heating enhanced degradation; single layout device; temperature dependence degradation; temperature driven interface trap generation; Decision support systems;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/IPFA.2015.7224446
  • Filename
    7224446
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1870216