DocumentCode :
1870297
Title :
Built-in duty cycle corrector using coded phase blending scheme for DDR/DDR2 synchronous DRAM Application
Author :
Kyu-Hyoun Kim ; Geun-Hee Cho ; Jung-Bae Lee ; Soo-In Cho
Author_Institution :
DRAM Dev., Samsung Electron., Hwasung, South Korea
fYear :
2003
fDate :
12-14 June 2003
Firstpage :
287
Lastpage :
288
Abstract :
This paper describes DLL (delay locked loop) with built-in DCC (duty cycle correction) capability using a newly proposed coded phase blending scheme. The proposed scheme dramatically improves the DCC range and also enhances the total DLL performance. The DLL has been designed and fabricated within 1G-bit DDR (double data rate) synchronous DRAM using 0.11 /spl mu/m process and the measurement data show that it has unlimited DCC range, faster turn-on speed and smaller jitter compared with our previous work (2001).
Keywords :
DRAM chips; delay lock loops; 0.11 micron; DRAM; coded phase blending; delay locked loop; double data rate; duty cycle correction; Bandwidth; Clocks; DRAM chips; Delay; Frequency; Jitter; Random access memory; Signal generators; Stability; Timing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-034-8
Type :
conf
DOI :
10.1109/VLSIC.2003.1221229
Filename :
1221229
Link To Document :
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