Title :
The FA approaching and designed solution to the hidden PID killer
Author :
XuBo Chen ; Gang Qian ; LiLung Lai ; SoonFatt Ng
Author_Institution :
Semicond. Manuf. Int. (Shanghai) Corp., Shanghai, China
fDate :
June 29 2015-July 2 2015
Abstract :
Plasma Induced Damage (PID) was identified as the killer on one 0.18um product during the yield ramp-up. FA process started at the electrical analysis and then went through physical approaches for evidences. Finally, we got the solution from both design/layout and quality gating.
Keywords :
failure analysis; integrated circuit yield; FA process; electrical analysis; failure analysis; hidden PID killer; plasma induced damage; quality gating; size 0.18 mum; yield ramp-up; CMOS integrated circuits; Layout; Leakage currents; Logic gates; Manufacturing; Metals; Plasmas;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224449
