• DocumentCode
    1870318
  • Title

    Charge-transferred presensing and efficiently precharged negative word-line schemes for low-voltage DRAMs

  • Author

    Jae-Yoon Sim ; Young-Gu Gang ; Kyu-Nam Lim ; Joong-Yong Choi ; Sang-Keun Kwak ; Ki-Chul Chun ; Jei-Hwan Yoo ; Dong-Il Seo ; Soo-In Cho

  • Author_Institution
    Memory Product & Technol. Div., Samsung Electron., Hwasung, South Korea
  • fYear
    2003
  • fDate
    12-14 June 2003
  • Firstpage
    289
  • Lastpage
    292
  • Abstract
    A 256 Mb SDRAM is implemented with a 0.12 /spl mu/m technology to verify two circuit schemes suitable for mobile application. A charge transferred presensing is proposed to achieve fast low-voltage sensing and robust operation. With a precharge disabler for productivity, new negative word-line scheme is also proposed to bypass the majority of discharging current to VSS without switching control.
  • Keywords
    DRAM chips; charge-transferred presensing; discharging current; low-voltage DRAMs; low-voltage sensing; precharged negative word-line schemes; Bridge circuits; Charge pumps; Degradation; Low voltage; Productivity; Random access memory; Robustness; SDRAM; Storage area networks; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits, 2003. Digest of Technical Papers. 2003 Symposium on
  • Conference_Location
    Kyoto, Japan
  • Print_ISBN
    4-89114-034-8
  • Type

    conf

  • DOI
    10.1109/VLSIC.2003.1221230
  • Filename
    1221230
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1870318