Title :
Charge-transferred presensing and efficiently precharged negative word-line schemes for low-voltage DRAMs
Author :
Jae-Yoon Sim ; Young-Gu Gang ; Kyu-Nam Lim ; Joong-Yong Choi ; Sang-Keun Kwak ; Ki-Chul Chun ; Jei-Hwan Yoo ; Dong-Il Seo ; Soo-In Cho
Author_Institution :
Memory Product & Technol. Div., Samsung Electron., Hwasung, South Korea
Abstract :
A 256 Mb SDRAM is implemented with a 0.12 /spl mu/m technology to verify two circuit schemes suitable for mobile application. A charge transferred presensing is proposed to achieve fast low-voltage sensing and robust operation. With a precharge disabler for productivity, new negative word-line scheme is also proposed to bypass the majority of discharging current to VSS without switching control.
Keywords :
DRAM chips; charge-transferred presensing; discharging current; low-voltage DRAMs; low-voltage sensing; precharged negative word-line schemes; Bridge circuits; Charge pumps; Degradation; Low voltage; Productivity; Random access memory; Robustness; SDRAM; Storage area networks; Threshold voltage;
Conference_Titel :
VLSI Circuits, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-034-8
DOI :
10.1109/VLSIC.2003.1221230
