Title :
Multilayer etch masks for 3-dimensional fabrication of robust silicon carbide microstructures
Author :
Dowling, Karen M. ; Suria, Ateeq J. ; Shankar, Ashwin ; Chapin, Caitlin A. ; Senesky, Debbie G.
Author_Institution :
Electr. Eng. Dept., Stanford Univ., Stanford, CA, USA
Abstract :
This paper details the creation of 3-dimensional (3-D) microstructures in 4H-silicon carbide (4H-SiC) substrates with a plasma etch process that utilizes multilayer etch masks. An inductively coupled plasma (ICP) etch process (SF6/O2) for SiC was developed and etch rates as high as ~1 μm/min, a selectivity of 60:1 (SiC to Ni), and aspect ratio dependent etch characteristics were demonstrated. In addition, the selectivity of atomic layer deposited (ALD) Al2O3 etch masks to 4H-SiC is reported for the first time. Using this unique process, the microfabrication of complex microstructures (mechanical gears, Lego®-like bricks, and poker chips) is presented. The use of 4H-SiC as the structural material enables such microstructures to be utilized under high cycles of wear, within elevated temperatures, and within chemically corrosive environments.
Keywords :
alumina; atomic layer deposition; masks; microfabrication; silicon compounds; sputter etching; wide band gap semiconductors; 3-dimensional fabrication; 3D microstructures; Al2O3; H-SiC; ICP; Lego-like bricks; aspect ratio dependent etch characteristics; atomic layer deposited etch masks; chemically corrosive environments; complex microstructure microfabrication; inductively coupled plasma etch process; mechanical gears; multilayer etch masks; poker chips; robust silicon carbide microstructures; structural material; Aluminum oxide; Etching; Microstructure; Nickel; Nonhomogeneous media; Plasmas; Silicon carbide;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2015 28th IEEE International Conference on
Conference_Location :
Estoril
DOI :
10.1109/MEMSYS.2015.7050944