DocumentCode :
1870362
Title :
Improve latch-up immunity by circuit solution
Author :
Hui-Wen Tsai ; Ming-Dou Ker
Author_Institution :
Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fYear :
2015
fDate :
June 29 2015-July 2 2015
Firstpage :
527
Lastpage :
530
Abstract :
A concept of active guard ring and its corresponding circuit solution to enhance the latch-up immunity of integrated circuits (IC) are proposed and verified in a 0.6-um 5-V CMOS process. By detecting the over-shooting/under-shooting trigger current during latchup current test (I-test), some compensation current generated from on-chip ESD PMOS or NMOS devices through special circuit design can effectively reduce the latchup trigger current that injecting into the core circuit blocks. Therefore, the latchup immunity of I-test with positive or negative trigger current applied at the I/O pins can be significantly improved.
Keywords :
CMOS logic circuits; flip-flops; logic design; logic testing; trigger circuits; CMOS process; I-O pins; I-test; IC; NMOS devices; active guard ring; circuit design; circuit solution; compensation current; integrated circuits; latch-up immunity; latchup current test; latchup trigger current; on-chip ESD PMOS devices; over-shooting trigger current; size 0.6 mum; under-shooting trigger current; voltage 5 V; Art; CMOS integrated circuits; Electrostatic discharges; Layout; Logic gates; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
Type :
conf
DOI :
10.1109/IPFA.2015.7224450
Filename :
7224450
Link To Document :
بازگشت