Title :
Application study of simply and low cost numerical aperture increasing lens (NAIL) system for OBIRCH and EMMI in backside failure analysis
Author :
Li Tian ; Guoqiang Zhang ; Kuibo Lan ; Gaojie Wen ; Dong Wang
Author_Institution :
Product Anal. Lab. of Quality Dept., Freescale Semicond. (China) Ltd., Tianjin, China
fDate :
June 29 2015-July 2 2015
Abstract :
Now it was very difficult to do failure analysis (FA) from front side with multi-metal layers and scaling down. So, OBIRCH & EMMI analysis from backside was studied in microelectronics yield in recent years. As is known to all, we could capture clearer infrared (IR) image from backside as Si substrate was thinner. But if we needed higher resolution image with conventional optical objective lens, we must introduce numerical aperture increasing lens (NAIL) technology or shorter wavelength light to improve numerical aperture (NA) in objective space. The numerical aperture increasing lens (NAIL) was one effective solution for FA from backside. Many company and research center developed NAIL system which was applied in FA. In this paper, we introduce simple & low cost NAIL system to complete application study for OBIRCH and EMMI analysis. In real cases hotspots and emission spots were captured with the NAIL system from backside. As a result we obtained higher resolution image and distinguished some spots from adjacent small devices. Thus, we believed our NAIL system was beneficial to our FA from backside.
Keywords :
failure analysis; infrared imaging; integrated circuit reliability; integrated circuit testing; lenses; nondestructive testing; EMMI analysis; NAIL system; OBIRCH analysis; backside failure analysis; emission microscopy; infrared image; numerical aperture increasing lens; optical beam induced resistance change; Failure analysis; Image resolution; Integrated circuits; Lenses; Nails; Needles; Probes; EMMI; Fialure analysis; IR image; NAIL system; OBIRCH;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224451