• DocumentCode
    1870454
  • Title

    A low current CMOS voltage regulator including RF desensitization for RFIC power amplifiers

  • Author

    Eyebe, G.A. ; Nerguizian, V. ; Constantin, N.G.

  • Author_Institution
    Ecole de Technol. Super., Univ. du Quebec, Montréal, QC, Canada
  • fYear
    2012
  • fDate
    April 29 2012-May 2 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents a CMOS voltage regulator employing an operational-amplifier operated from a 1.8V supply with very low current consumption, capable of delivering a stable regulated 1.4V output voltage with high enough current sourcing capability for the biasing of GaAs HBT RFIC power amplifiers, and subjected to strong RF perturbations. These features are particularly important in multi-technology RFIC power amplifier modules requiring advanced CMOS control functions for efficiency and linearity performance improvement, but having minimal RF signal isolation between the RF amplifier IC and the CMOS control IC, for compactness and cost considerations. The regulator design uses a recycled folded cascode operational-amplifier structure in a CMOS 0.18μm technology. The results presented show a total bias current of 135μA for the operational-amplifier, a current sourcing capability of 20mA when delivered to the equivalent load seen at the base of a power GaAs HBT RF transistor under 1.88GHz-20dBm excitation, and a drop of only 40mV in the regulated output voltage (97% regulation) when using an RF isolation inductor as small as 6nH.
  • Keywords
    CMOS integrated circuits; III-V semiconductors; heterojunction bipolar transistors; operational amplifiers; power amplifiers; radiofrequency amplifiers; radiofrequency integrated circuits; CMOS control IC; CMOS voltage regulator; GaAs; HBT RFIC power amplifier; RF amplifier IC; RF desensitization; RF isolation inductor; RF perturbation; RF signal isolation; current 135 muA; linearity performance improvement; recycled folded cascode operational-amplifier structure; regulator design; size 0.18 mum; voltage 1.4 V; voltage 1.8 V; CMOS integrated circuits; Gallium arsenide; RF signals; Radio frequency; Regulators; Transistors; Voltage control; Amplifier; CMOS; RFIC; Regulator;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical & Computer Engineering (CCECE), 2012 25th IEEE Canadian Conference on
  • Conference_Location
    Montreal, QC
  • ISSN
    0840-7789
  • Print_ISBN
    978-1-4673-1431-2
  • Electronic_ISBN
    0840-7789
  • Type

    conf

  • DOI
    10.1109/CCECE.2012.6335008
  • Filename
    6335008