Title :
Improving the resistive switching reliability via controlling the resistance states of RRAM
Author :
Yang Li ; Shibing Long ; Meiyun Zhang ; Guoming Wang ; Yan Wang ; Xiaoxin Xu ; Dinglin Xu ; Hangbing Lv ; Qi Liu ; Ming Liu
Author_Institution :
Key Lab. of Microelectron. Devices & Integrated Technol., Inst. of Microelectron., Beijing, China
fDate :
June 29 2015-July 2 2015
Abstract :
The variation of switching parameters in RRAM is impacted by the resistance states through a statistical analysis. We proposed some improved program/erase (P/E) methods to precisely control the fluctuation of the resistance states. In DC P/E operation, combing current-sweep-induced gradual SET and voltage-sweep-induced gradual RESET, uniform resistance states can be achieved. In pulse P/E operation, width/height-adjusting method was proposed to control the resistance value after switching. After using this new method, the variance of the RON and ROFF has decreased by 40% and 81%, respectively, and the resistive switching endurance has increased from 103 cycles to more than 106 cycles.
Keywords :
circuit reliability; electric resistance; resistive RAM; statistical analysis; P-E methods; RRAM; combing current-sweep-induced gradual SET; program-erase methods; resistance states; resistive switching endurance; resistive switching reliability; statistical analysis; switching parameters; voltage-sweep-induced gradual RESET; width-height-adjusting method; Films; Hafnium compounds; Microelectronics; Resistance; Standards; Switches;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224456
