Title :
High mobility tin oxide deposition with methanol addition
Author :
Van Deelen, Joop ; Volintiru, Ioanna ; de Graaf, A. ; Poodt, P.
Author_Institution :
TNO Sci. & Ind., Eindhoven, Netherlands
Abstract :
SnO2 coated glass is widely used in thin film PV. Atmospheric pressure chemical vapor deposition (APCVD) is the most common method of deposition and apart from a tin precursor and oxygen precursor, other additives can improve the layer quality. In this contribution, the beneficial effect of methanol is discussed. Undoped tin oxide (SnO2) thin films have been deposited in a stagnant point flow chemical vapor deposition reactor. By adding methanol during the deposition process ten times more conductive SnO2 films are obtained, with remarkably high mobility values of up to 55 cm2/Vs. The investigations on the morphological and structural properties indicate that the main effect of methanol is the densification of the SnO2 films, which probably causes the improvement in the electrical properties. In all conditions the nucleation and coalescence phases take place very early in the growth. The films are already very conductive at a thickness below 10 nm, which is very beneficial to applications that have strict requirements in terms of film transparency.
Keywords :
carrier mobility; chemical vapour deposition; densification; nucleation; semiconductor growth; semiconductor thin films; tin compounds; transparency; wide band gap semiconductors; SnO2; atmospheric pressure chemical vapor deposition; coalescence; conductive film; densification; electrical properties; film transparency; high mobility tin oxide deposition; layer quality; methanol addition; morphological properties; nucleation; stagnant point flow chemical vapor deposition reactor; structural properties; undoped tin oxide thin film; wide band gap semiconductor; Chemical vapor deposition; Conductivity; Electron mobility; Films; Methanol; Tin;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6186533