DocumentCode
1870670
Title
The Origin of so-called ghost modulated reflectance mapping and its application in FA
Author
Zhongling Qian ; Brillert, Christof ; Burmer, Christian
Author_Institution
Infineon Technol. AG, Munich, Germany
fYear
2015
fDate
June 29 2015-July 2 2015
Firstpage
577
Lastpage
580
Abstract
In this paper, the so-called ghost modulated reflectance mapping (GMRM) outside field effect transistor (FET) active regions is studied with a simplified interference model and discussed in detail. It aims at gaining an insight into the mechanism of its formation. Although such ghost image is not expected, it can also be taken into use in optimal optical frequency mapping/voltage probing in advanced logic/power IC products.
Keywords
field effect transistors; optical images; reflectivity; semiconductor device models; semiconductor device reliability; semiconductor device testing; FA; FET active regions; GMRM; failure analysis; field effect transistor; ghost image; ghost modulated reflectance mapping; interference model; logic-power IC products; optimal optical frequency mapping; voltage probing; Integrated optics; Interference; Optical diffraction; Optical imaging; Optical modulation; Optical reflection; Reflectivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location
Hsinchu
Type
conf
DOI
10.1109/IPFA.2015.7224462
Filename
7224462
Link To Document