MOS solar cells with oxides deposited by sol-gel processing

It is proposed that the metal-oxide-semiconductor (MOS) solar cells with sol-gel oxides deposited by spin coating are produced in this study. This sol-gel-derived SiO₂ layer is not very thin and the deviation in the thickness of the sol-gel layer is not slight. In general, the characteristics of MOS solar cells are significantly affected by the thickness of the SiO₂ layer. Particularly, the thermal grown oxide thickness required is less than 2nm for MOS solar cell applications. It is useful for large-scale and large-amount manufacturing that the influence of nonuniformity of oxide thickness on the characteristics of MOS solar cells with sol-gel oxides is reduced. It is observed that the short-circuit current density (J_sc) of 15.56 mA/cm², the open-circuit voltage (V_oc) of 0.49V, the fill factor (FF) of 0.723 and the conversion efficiency (η%) of 5.44% are obtained by means of the current-voltage (I-V) measurements under AM 1.5 illumination at 25°C in the MOS solar cell with sol-gel oxides.