Title :
Fault detection and fault localization using IDDQ-testing in parallel testable FAST-SRAMs
Author :
Elm, Christian ; Tavangarian, Djamshid
Author_Institution :
Tech. Inf. II, Fern Univ., Hagen, Germany
Abstract :
This paper contributes to the area of IDDQ-testing of SRAMs by extending fault detection to transition coupling and neighborhood pattern sensitive faults. Furthermore IDDQ-testing is expanded to fault localization. To accelerate existing test procedures of RAMs, associative search based test algorithms are modified with IDDQ-testability for use in so called FAST-RAMs, which are designed to be tested in parallel. This method reduces the complexity of existing test algorithms by one or two orders. The chip area to implement FAST-testability runs up to a few per cent or per mille depending on the RAM architecture. Circuit details are discussed and compared with existing SRAM testing
Keywords :
CMOS integrated circuits; SRAM chips; integrated circuit testing; memory architecture; IDDQ-testing; RAM architecture; associative search based test algorithms; fault detection; fault localization; neighborhood pattern sensitive faults; parallel testable FAST-SRAMs; test algorithms; test procedures; transition coupling; Algorithm design and analysis; Circuit faults; Circuit testing; Combinational circuits; Costs; Fault detection; Life estimation; Random access memory; Read-write memory; Steady-state;
Conference_Titel :
VLSI Test Symposium, 1994. Proceedings., 12th IEEE
Conference_Location :
Cherry Hill, NJ
Print_ISBN :
0-8186-5440-6
DOI :
10.1109/VTEST.1994.292285