Title :
Heterojunction with intrinsic thin layer (HIT) solar cell under mechanical bending
Author :
Lee, M.H. ; Chang, S.T. ; Tai, C.-W. ; Shen, J.-D. ; Lee, C.-C.
Author_Institution :
Inst. of Electro-Opt. Sci. & Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan
Abstract :
The strain distribution and electrical characteristics of heterojunction with intrinsic thin layer (HIT) solar cell with mechanical bending was studied in this work. The efficiency decreased with mechanical strain increasing due to bandgap narrowing. The advantage of wafer thin down for HIT is not only decreasing electron-hole recombination, but also reducing variation of performance with mechanical strains.
Keywords :
bending; electron-hole recombination; elemental semiconductors; energy gap; internal stresses; semiconductor heterojunctions; semiconductor thin films; silicon; solar cells; HIT solar cell; Si; bandgap narrowing; electrical characteristics; electron-hole recombination reduction; heterojunction with intrinsic thin layer solar cell; mechanical bending; mechanical strain; performance variation reduction; strain distribution; wafer thin down; Educational institutions; Electric variables; Photonic band gap; Photovoltaic cells; Semiconductor device modeling; Strain; Stress;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6186550
