Heterojunction with intrinsic thin layer (HIT) solar cell under mechanical bending

Author

Lee, M.H. ; Chang, S.T. ; Tai, C.-W. ; Shen, J.-D. ; Lee, C.-C.

Author_Institution

Inst. of Electro-Opt. Sci. & Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan

fYear

2011

fDate

19-24 June 2011

Abstract

The strain distribution and electrical characteristics of heterojunction with intrinsic thin layer (HIT) solar cell with mechanical bending was studied in this work. The efficiency decreased with mechanical strain increasing due to bandgap narrowing. The advantage of wafer thin down for HIT is not only decreasing electron-hole recombination, but also reducing variation of performance with mechanical strains.

Keywords

bending; electron-hole recombination; elemental semiconductors; energy gap; internal stresses; semiconductor heterojunctions; semiconductor thin films; silicon; solar cells; HIT solar cell; Si; bandgap narrowing; electrical characteristics; electron-hole recombination reduction; heterojunction with intrinsic thin layer solar cell; mechanical bending; mechanical strain; performance variation reduction; strain distribution; wafer thin down; Educational institutions; Electric variables; Photonic band gap; Photovoltaic cells; Semiconductor device modeling; Strain; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE

Conference_Location

Seattle, WA

ISSN

0160-8371

Print_ISBN

978-1-4244-9966-3

Type

conf

DOI

10.1109/PVSC.2011.6186550

Filename

6186550