DocumentCode
1871176
Title
Size effect on brittle-ductile transition temperature of silicon by means of tensile testing
Author
Uesugi, A. ; Hirai, Y. ; Tsuchiya, T. ; Tabata, O.
Author_Institution
Dept. of Micro Eng., Kyoto Univ., Kyoto, Japan
fYear
2015
fDate
18-22 Jan. 2015
Firstpage
389
Lastpage
392
Abstract
This paper reports the size effect on brittle-ductile transition temperature (BDTT) of single crystal silicon (SCS) using different width specimens (120-μm long, 5-μm thick and 4 or 9-μm wide). The BDTT was characterized using tensile testing in a vacuum from room temperature to 600 °C. The fractured specimens showed that the slips were occurred at 500 °C and above, which indicated that the BDTT of micrometer-sized silicon decreased compared to millimeter-sized structures. By comparing the temperature ranges of the slip occurrences among the different sized specimens including other researchers´ reports, we found that the length along slips-propagation direction, i.e. thickness, might dominate the BDTT.
Keywords
ductile-brittle transition; elemental semiconductors; silicon; slip; tensile testing; Si; brittle-ductile transition temperature; fractured specimen; micrometer-sized silicon; millimeter-sized structure; single crystal silicon; size 120 mum; size 2 mum; size 4 mum; size 9 mum; size effect; slip-propagation direction; temperature 293 K to 600 degC; tensile testing; Crystals; Displacement measurement; Stress measurement; Temperature measurement; Temperature sensors; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2015 28th IEEE International Conference on
Conference_Location
Estoril
Type
conf
DOI
10.1109/MEMSYS.2015.7050971
Filename
7050971
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