• DocumentCode
    1871176
  • Title

    Size effect on brittle-ductile transition temperature of silicon by means of tensile testing

  • Author

    Uesugi, A. ; Hirai, Y. ; Tsuchiya, T. ; Tabata, O.

  • Author_Institution
    Dept. of Micro Eng., Kyoto Univ., Kyoto, Japan
  • fYear
    2015
  • fDate
    18-22 Jan. 2015
  • Firstpage
    389
  • Lastpage
    392
  • Abstract
    This paper reports the size effect on brittle-ductile transition temperature (BDTT) of single crystal silicon (SCS) using different width specimens (120-μm long, 5-μm thick and 4 or 9-μm wide). The BDTT was characterized using tensile testing in a vacuum from room temperature to 600 °C. The fractured specimens showed that the slips were occurred at 500 °C and above, which indicated that the BDTT of micrometer-sized silicon decreased compared to millimeter-sized structures. By comparing the temperature ranges of the slip occurrences among the different sized specimens including other researchers´ reports, we found that the length along slips-propagation direction, i.e. thickness, might dominate the BDTT.
  • Keywords
    ductile-brittle transition; elemental semiconductors; silicon; slip; tensile testing; Si; brittle-ductile transition temperature; fractured specimen; micrometer-sized silicon; millimeter-sized structure; single crystal silicon; size 120 mum; size 2 mum; size 4 mum; size 9 mum; size effect; slip-propagation direction; temperature 293 K to 600 degC; tensile testing; Crystals; Displacement measurement; Stress measurement; Temperature measurement; Temperature sensors; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2015 28th IEEE International Conference on
  • Conference_Location
    Estoril
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2015.7050971
  • Filename
    7050971