FET properties of single-walled carbon nanotubes individually assembled utilizing single strand DNA

Author

Hokazono, Kosuke ; Hirai, Yoshikazu ; Tsuchiya, Toshiyuki ; Tabata, Osamu

Author_Institution

Grad. Sch. of Eng., Kyoto Univ., Kyoto, Japan

fYear

2015

fDate

18-22 Jan. 2015

Firstpage

417

Lastpage

420

Abstract

This paper reports a new assembly process for isolated single-walled carbon nanotubes (SWCNTs) on MEMS structures utilizing single strand DNA (ssDNA) and the electrical properties of SWCNT field effect transistors (FETs). Mono-dispersed SWCNT solution was prepared by wrapping biotin modified ssDNA around SWCNT and the SWCNTs were assembled onto gold electrodes using biotin-avidin bindings. The isolated SWCNT bridges between electrode gaps of 100 to 300 nm wide were successfully demonstrated. To improve electrical contacts, electroless gold deposition was employed. The I_d-V_g curves in back-gate FET configurations showed either metallic or semiconducting properties and we confirmed that the isolated SWCNTs were individually assembled between the electrodes.

Keywords

DNA; carbon nanotube field effect transistors; electrical contacts; electrochemical electrodes; gold; micromechanical devices; Au; C; MEMS structures; SWCNT field effect transistors; assembly process; back-gate FET configurations; biotin modified ssDNA; biotin-avidin bindings; electrical contacts; electrical properties; electrode gaps; electroless gold deposition; gold electrodes; isolated SWCNT bridges; isolated single walled carbon nanotubes; metallic properties; monodispersed SWCNT solution; semiconducting properties; single strand DNA; Assembly; Carbon nanotubes; Contacts; Dispersion; Electrodes; Field effect transistors; Gold;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2015 28th IEEE International Conference on

Conference_Location

Estoril

Type

conf

DOI

10.1109/MEMSYS.2015.7050978

Filename

7050978