Title :
Validation of a new nonlinear HEMT model by intermodulation characterization
Author :
Guoli Qu ; Parker, A.E.
Author_Institution :
Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia
Abstract :
A new HEMT model is presented. The second and third-order intermodulation products of HEMT amplifiers are investigated at low frequency (50 MHz) and high frequency (1 GHz) respectively. Simulations performed with SPICE agree well with measurements. The contribution of nonlinear capacitance to intermodulation distortion is investigated.
Keywords :
UHF field effect transistors; capacitance; high electron mobility transistors; intermodulation distortion; microwave field effect transistors; semiconductor device models; HEMT amplifiers; IMD; intermodulation characterization; intermodulation distortion; nonlinear HEMT model; nonlinear capacitance; second-order intermodulation products; third-order intermodulation products; Capacitance; Circuit simulation; Distortion measurement; Electrons; Frequency measurement; HEMTs; Impedance measurement; Microwave frequencies; Nonlinear distortion; SPICE;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.705098
