DocumentCode
1871378
Title
Validation of a new nonlinear HEMT model by intermodulation characterization
Author
Guoli Qu ; Parker, A.E.
Author_Institution
Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia
Volume
2
fYear
1998
fDate
7-12 June 1998
Firstpage
745
Abstract
A new HEMT model is presented. The second and third-order intermodulation products of HEMT amplifiers are investigated at low frequency (50 MHz) and high frequency (1 GHz) respectively. Simulations performed with SPICE agree well with measurements. The contribution of nonlinear capacitance to intermodulation distortion is investigated.
Keywords
UHF field effect transistors; capacitance; high electron mobility transistors; intermodulation distortion; microwave field effect transistors; semiconductor device models; HEMT amplifiers; IMD; intermodulation characterization; intermodulation distortion; nonlinear HEMT model; nonlinear capacitance; second-order intermodulation products; third-order intermodulation products; Capacitance; Circuit simulation; Distortion measurement; Electrons; Frequency measurement; HEMTs; Impedance measurement; Microwave frequencies; Nonlinear distortion; SPICE;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Print_ISBN
0-7803-4471-5
Type
conf
DOI
10.1109/MWSYM.1998.705098
Filename
705098
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