Modeling and parameter identification of crystalline silicon photovoltaic devices

In this paper the physical correctness of the standard single-exponential (one-diode) model of crystalline-Si photovoltaic devices is examined. In particular, we focus on the shunt current. I-V curves of in situ illuminated polycrystalline-Si photovoltaic modules are measured, and based on these measurements, we extract the shunt current. There is a certain voltage range in which the shunt current shows an Ohmic-like behavior, but the value of the resistance varies with irradiance and the quality of illumination. In addition, the Ohmic behavior takes place at voltages well below the maximum-power point (MPP). At higher voltages, the shunt current drops to negligible values. We conclude that it is physically incorrect to model a crystalline-PV device with a constant value of the shunt resistance.