Title :
High Performance NMOS Transistors for 45nm SOI Technologies
Author :
Bo, Xiang-Zheng ; Kang, Laegu ; Luo, T. ; Junker, K. ; Zollner, S. ; Spencer, G. ; Kolagunta, V. ; Cheek, J.
Author_Institution :
Austin Silicon Technol. Solutions, Freescale Semicond. Inc., Austin, TX
Abstract :
We demonstrate NMOS performance enhancements of up to ~18% for applications in a 45 nm SOI technology. The performance boost was achieved using high tensile-stressed UV film in conjunction with stress memorization techniques (SMT). For the first time we demonstrate that using a UV-cured tensile film allows a 6% performance boost on the SOI NMOS, achieving a drive current of ~1170 muA/mum (1250, non-self-heated) at Ioff = 100 nA/mum, Vdd = 1 V.
Keywords :
MOS integrated circuits; nanoelectronics; silicon compounds; silicon-on-insulator; NMOS transistors; SOI technologies; SiO2-Si; SiO2-Si - Interface; UV tensile silicon nitride film; size 45 nm; stress memorization techniques; tensile-stressed UV film; voltage 1 V; Annealing; Compressive stress; Conference proceedings; Degradation; Implants; MOS devices; MOSFETs; Silicon compounds; Surface-mount technology; Tensile stress;
Conference_Titel :
SOI Conference, 2007 IEEE International
Conference_Location :
Indian Wells, CA
Print_ISBN :
978-1-4244-0879-5
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2007.4357830
