An Embedded Silicon-Carbon S/D Stressor CMOS Integration on SOI with Enhanced Carbon Incorporation by Laser Spike Annealing

Author

Grudowski, P. ; Dhandapani, V. ; Zollner, S. ; Goedeke, D. ; Loiko, K. ; Tekleab, D. ; Adams, V. ; Spencer, G. ; Desjardins, H. ; Prabhu, L. ; Garcia, R. ; Foisy, M. ; Theodore, D. ; Bauer, M. ; Weeks, D. ; Thomas, S. ; Thean, A. ; White, B.

Author_Institution

Freescale Semicond. Inc., Austin

fYear

2007

fDate

1-4 Oct. 2007

Firstpage

17

Lastpage

18

Abstract

We report a CMOS-compatible embedded silicon-carbon (eSiC) source/drain stressor technology with NMOS performance enhancement. The integration includes up to 2.6% substitutional carbon (C_sub) epitaxial Si:C and laser spike annealing (LSA) for increased C_sub incorporation. 26% channel resistance (Rch) reduction and 11% Idlin-Ioff enhancement for 0.5% C_sub and 60% Rch reduction for 2.2% C_sub are demonstrated.

Keywords

CMOS integrated circuits; MOS integrated circuits; carbon; laser beam annealing; silicon; silicon compounds; silicon-on-insulator; CMOS integration; NMOS performance enhancement; SOI; Si-SiO₂; Si:C; carbon incorporation; channel resistance; embedded silicon-carbon source-drain stressor technology; laser spike annealing; Annealing; CMOS process; CMOS technology; Degradation; Doping; Epitaxial growth; MOS devices; Rapid thermal processing; Silicon carbide; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2007 IEEE International

Conference_Location

Indian Wells, CA

ISSN

1078-621X

Print_ISBN

978-1-4244-0879-5

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2007.4357831

Filename

4357831