Title :
Improved prediction of the intermodulation distortion characteristics of MESFETs and PHEMTs via a robust nonlinear device model
Author :
Cojocaru, V.I. ; Brazil, T.J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. Dublin, Ireland
Abstract :
The paper investigates the intermodulation distortion (IMD) prediction capabilities of the COBRA model by analysing the first, second and third order derivatives of the drain I/V model and the gate Q/V model. The model is extracted simply from DC and small-signal S-parameter data, without the need for complex low-frequency (VHF) measurements of harmonic output levels under low-load conditions, as proposed in previous studies. The computed main I/V characteristic and its derivatives are shown to be continuous over the entire bias plane, and are proven to give better results than other models available. Results of two-tone large signal tests for the case of a 0.2 /spl mu/m PHEMT process are presented, showing excellent agreement between simulated and experimental third and fifth intermodulation products.
Keywords :
S-parameters; Schottky gate field effect transistors; UHF field effect transistors; high electron mobility transistors; intermodulation distortion; microwave field effect transistors; semiconductor device models; 0.2 micron; COBRA model; I/V characteristic; IMD characteristics prediction; MESFETs; PHEMTs; drain I/V model; gate Q/V model; intermodulation distortion; pseudomorphic HEMT; robust nonlinear device model; small-signal S-parameter data; two-tone large signal tests; Data mining; Educational institutions; Intermodulation distortion; Intrusion detection; MESFETs; Microwave FETs; PHEMTs; Predictive models; Radio frequency; Robustness;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.705099
