Silicon Superlattice on SOI for High Mobility and Reduced Leakage

Author

Mears, Robert J. ; Hytha, Marek ; Dukovski, Ilija ; Yiptong, Augustin ; Huang, Xiangyang ; Halilov, Samed ; Broka, Andi ; Stephenson, Robert J. ; Rao, Vivek ; Webb, Douglas R. ; Prasad, Rajesh ; Kreps, Scott A. ; Takeuchi, Hideki ; Ikeda, Shu ; Gebara, Ga

Author_Institution

MEARS Technol., Waltham

fYear

2007

fDate

1-4 Oct. 2007

Firstpage

23

Lastpage

24

Abstract

In this paper, simultaneous NMOS drive current enhancement and gate leakage reduction via a novel silicon superlattice on SOI high mobility channel replacement layer is demonstrated. The technology, which is termed MST-SOI, has demonstrated in excess of 20% mobility enhancement, up to 30% drive current enhancement and significant gate leakage reduction compared to a baseline SOI process.

Keywords

MOS integrated circuits; carrier mobility; elemental semiconductors; semiconductor superlattices; silicon; silicon-on-insulator; MST-SOI technology; NMOS drive current enhancement; SOI; Si-SiO₂; gate leakage reduction; high mobility channel replacement layer; mobility enhancement; silicon superlattice; Conference proceedings; Dielectric substrates; Doping; Effective mass; Gate leakage; Instruments; Leakage current; MOS devices; Silicon; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2007 IEEE International

Conference_Location

Indian Wells, CA

ISSN

1078-621X

Print_ISBN

978-1-4244-0879-5

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2007.4357834

Filename

4357834