Title :
Modeling and Simulation of Poly-Space Effects in Uniaxially-Strained Etch Stop Layer Stressors
Author :
Ge, Lixin ; Adams, Vance ; Loiko, Konstantin ; Tekleab, Daniel ; Bo, Xiang-Zheng ; Foisy, Mark ; Kolagunta, Venkat ; Veeraraghavan, Surya
Author_Institution :
Austin Silicon Technol. Solutions, Freescale Semicond. Inc., Austin, TX
Abstract :
We develop, for the first time, a compact and scalable model to account for the poly-space effects (PSEs) in uniaxially-strained etch stop layer (ESL) stressors. The model is based on 2-dimensional (2D) finite element (FEM) stress simulations and 4-point bending characterization of silicon, and agrees well with measured data. The impact of PSEs on circuit performance is also discussed.
Keywords :
MOSFET; bending; etching; finite element analysis; integrated circuit modelling; semiconductor process modelling; silicon-on-insulator; 2D-FEM; 4-point bending characterization; MOSFET; SOI process; compact scalable model; poly-space effects; silicon bending characterization; two-dimensional finite element stress simulations; uniaxially-strained etch stop layer stressors; Circuit optimization; Circuit simulation; Compressive stress; Delay; Etching; MOSFETs; Semiconductor device modeling; Silicon; Stress measurement; Tensile stress;
Conference_Titel :
SOI Conference, 2007 IEEE International
Conference_Location :
Indian Wells, CA
Print_ISBN :
978-1-4244-0879-5
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2007.4357835
