Modeling and Simulation of Poly-Space Effects in Uniaxially-Strained Etch Stop Layer Stressors

Author

Ge, Lixin ; Adams, Vance ; Loiko, Konstantin ; Tekleab, Daniel ; Bo, Xiang-Zheng ; Foisy, Mark ; Kolagunta, Venkat ; Veeraraghavan, Surya

Author_Institution

Austin Silicon Technol. Solutions, Freescale Semicond. Inc., Austin, TX

fYear

2007

fDate

1-4 Oct. 2007

Firstpage

25

Lastpage

26

Abstract

We develop, for the first time, a compact and scalable model to account for the poly-space effects (PSEs) in uniaxially-strained etch stop layer (ESL) stressors. The model is based on 2-dimensional (2D) finite element (FEM) stress simulations and 4-point bending characterization of silicon, and agrees well with measured data. The impact of PSEs on circuit performance is also discussed.

Keywords

MOSFET; bending; etching; finite element analysis; integrated circuit modelling; semiconductor process modelling; silicon-on-insulator; 2D-FEM; 4-point bending characterization; MOSFET; SOI process; compact scalable model; poly-space effects; silicon bending characterization; two-dimensional finite element stress simulations; uniaxially-strained etch stop layer stressors; Circuit optimization; Circuit simulation; Compressive stress; Delay; Etching; MOSFETs; Semiconductor device modeling; Silicon; Stress measurement; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2007 IEEE International

Conference_Location

Indian Wells, CA

ISSN

1078-621X

Print_ISBN

978-1-4244-0879-5

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2007.4357835

Filename

4357835