Title :
Current status of antimonide-based mid-IR lasers
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
Summary form only given. Antimonide-based semiconductor lasers, either electrically or optically pumped, have made significant progress in the past few years. Near 2 /spl mu/m, GaInAsSb/AlGaAsSb quantum-well (QW) diode lasers have exhibited excellent performance, with room-temperature threshold current density as low as 50 A/cm/sup 2/, CW output power more than 1 W from 100-/spl mu/m aperture, and diffraction-limited CW power of 600 mW from tapered structures. Recently, room-temperature CW operation has been extended to 2.7 /spl mu/m by increasing the In content in GaInAsSb while limiting the As content to avoid the miscibility gap. The maximum CW power at 10/spl deg/C from a 100-/spl mu/m aperture was 500, 250 and 160 mW for 2.3, 2.5 and 2.6 /spl mu/m, respectively.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; gallium compounds; indium compounds; laser beams; optical pumping; quantum well lasers; 1 W; 10 C; 100 mum; 160 mW; 2 mum; 2.3 mum; 2.5 mum; 2.6 mum; 2.7 mum; 250 mW; 298 K; 500 mW; 600 mW; As content; CW output power; GaInAsSb-AlGaAsSb; GaInAsSb/AlGaAsSb quantum-well diode lasers; In content; Sb-based mid-IR lasers; diffraction-limited CW power; electrically pumped laser; maximum CW power; mid-IR lasers; miscibility gap; optically pumped laser; room-temperature CW operation; room-temperature threshold current density; semiconductor lasers; tapered structures; Apertures; Diffraction; Diode lasers; Laser excitation; Optical pumping; Power generation; Pump lasers; Quantum well lasers; Semiconductor lasers; Threshold current;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.834312
