Properties of poly silicon films deposited on silicon seed-layers prepared by AIC process

A polycrystalline silicon (pc-Si) film is produced by low-temperature LPCVD process on a poly silicon seed layer. The properties of such film are characterized and compared with the films on a glass substrate and a silicon wafer. The poly crystalline silicon seed layers are fabricated by aluminum-induced crystallization (AIC) process with a glass/Al/Al₂O₃/a-Si structure, in which the Al layer was deposited on the glass substrate by a DC magnetron sputter, and a-Si film by PECVD method, respectively. After the AIC process with 400°C for 150min, the poly silicon film has the average grain size of about 10μm. The poly silicon seed layer is thickened (i.e. the poly silicon film is deposited on the seed layer) by LPCVD process with 600°C for 60min. As results, it is observed that the quality of the poly silicon film on the seed layer is better than that on the glass and worse than that on the silicon wafer. But the deposited poly silicon absorber layer could not reflect the property of the poly silicon seed layer, due to the relatively low temperature process.