First demonstration of high power InAs/sub x/Sb/sub y/(P)/sub 1-x-y//InAs/sub x/Sb/sub 1-z/ electrical injection lasers diodes emitting between 4.0 and 4.8 /spl mu/m

Summary form only given. Mid-infrared laser diodes emitting at 3 to 5 /spl mu/m have potential applications in high resolution gas spectroscopy, free space communications, low loss fiber optic communication and military counter systems. III-V semiconductor compounds have become the focus of research for achieving high output power because of the numerous benefits they hold over IV-VI and II-VI emitters. Although recently, much of the MWIR research has highlighted novel emission structures such as the quantum cascade laser and type II laser, these structures suffer from significantly lower efficiencies than the interband lasers. Conventional interband strained-layer superlattice (SLS) InAsSb(P)/InAsSbP heterostructures, benefiting from more efficient band to band recombination, have been fabricated for emission wavelengths emitting between 4.0-4.8 /spl mu/m. We report the first InAs/sub x/Sb/sub y/(P)/sub 1-x-y//InAs/sub x/Sb/sub 1-z/ SLS injection lasers which benefit from better optical confinement and more emission wavelength flexibility as offered by a DH structure and a larger gain region than lasers based on a MQW active region.