Title :
Influence of Fluorine Implant on Threshold Voltage for Metal Gate FDSOI and MuGFET
Author :
Xiong, W. ; Hsu, C.H. ; Cleavelin, C.R. ; Ma, M. ; Patruno, P. ; Lee, C.-W. ; Yan, R. ; Lederer, D. ; Afzalian, A. ; Colinge, J.P.
Author_Institution :
Texas Instrum. Inc., Dallas
Abstract :
The origin of the large Vt shift observed in planar FDSOI is the creation of negative charge states in the BOX by F implant. F implant is a suitable approach for planar FDSOI SoC integration with single WF metal gate, but NOT for MuGFETs. F implant degrades electron mobility and the degradation is a function of F dose. The hole mobility is unaffected by F implant.
Keywords :
electron mobility; hole mobility; ion implantation; silicon-on-insulator; MuGFET; electron mobility; fluorine implant; hole mobility; metal gate FDSOI; negative charge states; threshold voltage; Conference proceedings; Implants; Instruments; MOS devices; MOSFETs; Microelectronics; Research and development; Silicon; Threshold voltage; USA Councils;
Conference_Titel :
SOI Conference, 2007 IEEE International
Conference_Location :
Indian Wells, CA
Print_ISBN :
978-1-4244-0879-5
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2007.4357840
