• DocumentCode
    1871896
  • Title

    Analog Operation of Uniaxially Strained FD SOI nMOSFETs in Cryogenic Temperatures

  • Author

    de Souza, M. ; Pavanello, M.A. ; Martino, J.A. ; Simoen, E. ; Claeys, C.

  • Author_Institution
    Univ. de Sao Paulo, Sao Paulo
  • fYear
    2007
  • fDate
    1-4 Oct. 2007
  • Firstpage
    45
  • Lastpage
    46
  • Abstract
    This paper presents the operation of uniaxially strained SOI nMOSFETs at cryogenics temperatures with emphasis in the most common analog figures of merit as the intrinsic gain, output conductance and linearity.
  • Keywords
    MOSFET; carrier mobility; cryogenic electronics; silicon-on-insulator; Si-SiO2; analog operation; cryogenics temperatures; intrinsic gain; linearity characteristics; output conductance; uniaxially strained fully depleted SOI nMOSFET; Capacitive sensors; Cryogenics; Intrusion detection; Linearity; MOS devices; MOSFETs; Silicon; Temperature; Transconductance; Uniaxial strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2007 IEEE International
  • Conference_Location
    Indian Wells, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-0879-5
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2007.4357844
  • Filename
    4357844
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1871896