Title :
Analog Operation of Uniaxially Strained FD SOI nMOSFETs in Cryogenic Temperatures
Author :
de Souza, M. ; Pavanello, M.A. ; Martino, J.A. ; Simoen, E. ; Claeys, C.
Author_Institution :
Univ. de Sao Paulo, Sao Paulo
Abstract :
This paper presents the operation of uniaxially strained SOI nMOSFETs at cryogenics temperatures with emphasis in the most common analog figures of merit as the intrinsic gain, output conductance and linearity.
Keywords :
MOSFET; carrier mobility; cryogenic electronics; silicon-on-insulator; Si-SiO2; analog operation; cryogenics temperatures; intrinsic gain; linearity characteristics; output conductance; uniaxially strained fully depleted SOI nMOSFET; Capacitive sensors; Cryogenics; Intrusion detection; Linearity; MOS devices; MOSFETs; Silicon; Temperature; Transconductance; Uniaxial strain;
Conference_Titel :
SOI Conference, 2007 IEEE International
Conference_Location :
Indian Wells, CA
Print_ISBN :
978-1-4244-0879-5
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2007.4357844
