Title :
Accurate Modeling and Analysis of Currents in Trapezoidal FinFET Devices
Author :
Rao, R. ; Bansal, A. ; Kim, J. ; Roy, K. ; Chuang, C.T.
Author_Institution :
Purdue Univ., West Lafayette
Abstract :
A framework for accurately determining the device currents in trapezoidal FinFET devices is presented. The analytical formulation also computes the equivalent threshold voltage of an ideal rectangular fin with iso-current characteristics. The approach easily lends itself to the sensitivity analysis of device currents to variations in the geometric parameters.
Keywords :
MOSFET; leakage currents; semiconductor device models; sensitivity analysis; device current modeling; equivalent threshold voltage; geometric parameters; iso-current characteristics; rectangular fin; sensitivity analysis; sub-threshold leakage; trapezoidal FinFET devices; Analytical models; Computational modeling; Conference proceedings; Degradation; FinFETs; MOSFET circuits; Predictive models; Semiconductor films; Silicon devices; Threshold voltage;
Conference_Titel :
SOI Conference, 2007 IEEE International
Conference_Location :
Indian Wells, CA
Print_ISBN :
978-1-4244-0879-5
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2007.4357845
