Title :
Effect of proton implantation on optically excited terahertz radiation from GaAs
Author :
Gong-Ru Lin ; Ci-Ling Pan
Author_Institution :
Inst. of Electro-Opt. Eng., Tatung Inst. of Technol., Taipei, Taiwan
Abstract :
Summary form only given. Optically excited THz radiation from unbiased semiconductor has been employed as an alternative technique for characterizing the surface properties of damaged semiconductors. In this work, we report the optically excited THz radiation from proton-bombarded GaAs (GaAs:H/sup +/). The different time-resolved THz fields radiating from GaAs:H/sup +/ and semi-insulating GaAs associated with their correlated mechanisms were primarily compared and elucidated.
Keywords :
III-V semiconductors; gallium arsenide; ion implantation; proton effects; submillimetre wave generation; time resolved spectra; GaAs; GaAs:H; THz field reversal; correlated mechanisms; damaged semiconductors; damping oscillation; optically excited terahertz radiation; proton implantation effect; semi-insulating; surface properties; time-resolved THz fields; Gallium arsenide; Laser excitation; Optical pulse shaping; Optical pulses; Optical pumping; Optical sensors; Probes; Protons; Shape; Substrates;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.834324
