Interface modification of ZnO:B Transparent Conducting Oxides for amorphous silicon solar cells

We addressed the interface problem of a good p-layer contact with boron doped zinc oxide as Transparent Conducting Oxides (TCO). The p-type microcrystalline Silicon (p-μc-Si:H) layer was performed by plasma-enhanced chemical vapor deposition (PECVD) technique as an interface layer between TCO and p-i-n amorphous Si solar cells. The presence of a thin p-type μc-Si:H between ZnO:B and p-a-SiC:H plays a major role by causing an improvement of initial conversion efficiency from 7.1% to 8.2% and the open circuit voltage (Voc) from 0.78V to 0.84V. This high Voc value can be attributed to modification in the current transport in this region due to creation of a potential barrier in the TCO/p-a-SiC:H interface. The short circuit current density Jsc was improved from 13.5 to 15.1mA/cm² and the quantum efficiency in short region is obviously enhanced.